| PART |
Description |
Maker |
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| BFS19 |
NPN Medium Frequency Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| NE664M04-T2 NE664M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| NE678M04-T2-A |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| 2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC1707 2SC1707A 2SC1707AH |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING
From old datasheet system
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
